A positive gate bias turns on the 2DEG channel It works just like MOSFET except better switching performance I DS vs. GaN SystemsĢ Agenda Basics Gate Drive Design considerations Design examples PCB Layout Switching Testing results Please visit for the latest version of this document GaN Systems 2ģ Fundamentals of a GaN HEMT GaN Enhancement mode High Electron Mobility Transistor (E-HEMT) A lateral 2-dimensional electron gas (2DEG) channel formed on AlGaN/GaN heteroepitaxy structure provides very high charge density and mobility For enhancement mode operation, a gate is implemented to deplete the 2DEG underneath at 0V or negative bias.
1 GN00 Application Guide Design with GaN Enhancement mode HEMT Updated on April 2, 208 GaN Systems Inc.
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